| PART |
Description |
Maker |
| 2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| FDG8842CZ |
Complementary PowerTrench? MOSFET
Complementary PowerTrench㈢ MOSFET
|
Fairchild Semiconductor
|
| IS9-1715ARH/PROTO 5962F0052101VXC 5962F0052101QXC |
Complementary Switch FET Driver, Rad-Hard
Radiation Hardened Complementary Switch FET Driver 3 A BUF OR INV BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
| MJL0281A MJL0281AG MJL0302A MJL0302AG JL0281AG |
Complementary Power Transistors
Complementary NPN-PNP Power Bipolar Transistors
|
ON Semiconductor
|
| MJL21196 MJL21195 ON2056 |
STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes
COMPLEMENTARY SILICON POWER TRANSISTORS
16 AMPERE COMPLEMENTARY SILICON POWER
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| STK2030 STK2040 STK2050 STK2230 STK2240 STK2250 |
V(cc): -54V; 5A; 2-channel pure comlementary DPP
(STK2xxx) 2CH PURE COMPLEMENTARY D.P.P. SERIES
2CH PURE COMPLEMENTARY D.P.P. SERIES 2声道纯互补民进党系列
|
SANYO
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
